BFY50 Transistor Datasheet pdf, BFY50 Equivalent. Parameters and Characteristics. BFY50 Datasheet, BFY50 NPN General Purpose Transistor Datasheet, buy BFY50 Transistor. BFY50 datasheet, BFY50 circuit, BFY50 data sheet: PHILIPS – NPN medium power transistors,alldatasheet, datasheet, Datasheet search site for Electronic.
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All leads are isolated More information. Product overview Type number.
Philips Semiconductors BFY50 Series Datasheets. BFY52, BFY51, BFY50 Datasheet.
Low voltage NPN power Darlington transistor. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 22 7. Application information Where application information is given, it is advisory and does not form part of the specification. To make this website work, we log user data and share it with processors. Product specification Supersedes data of Aug Designed for use in general purpose power amplifier and switching applications.
V SCA54 All rights are reserved. Product data sheet Supersedes data of May Product specification Supersedes data of Apr Description in a plastic package using TrenchMOS technology. Exposure to limiting values for extended periods may affect device reliability. Please v isit our website for pricing and availability at www.
Designed for general-purpose amplifier and low speed switching applications. Benefit is lower component count, internal compensation for temperature and current gain spread. Avis Eustacia Chase 1 years ago Views: No liability will be accepted by the publisher for any consequence of its use.
Start display at page:. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Product data sheet Supersedes data of Apr Global Network Access International Access Rates We know that you need to communicate with your partners, colleagues and customers around the world.
Hfy50 data sheet Supersedes data of Oct Secondary protection for DSL lines. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
A linear amplifier 1. Product specification Supersedes data of Sep NPN general-purpose transistors in small plastic packages. Hotel Minsk Business Center, Bld.
NPN transistors Applications Audio, general purpose switching and by50 transistors Description The devices are manufactured in Planar technology with More information. RF transistor with internal bias circuit. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with. All leads are isolated. Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information.
BB Low-voltage variable capacitance double diode. We make every effort to understand the difficulties More information. Product data sheet Supersedes data of Jan Product specification IC24 Data Handbook.
N-channel enhancement mode field-effect transistor Rev. BoxTelFax Belarus: This data sheet contains final product specifications. They are designed for high speed. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. General description NPN general-purpose transistors. Philips Semiconductors, 6F, No.
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Suitable for applications requiring low noise and good h FE linearity, eg. Low voltage PNP power transistor. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.